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Part Number: SI1065X-T1-E3
Manufacturer: Vishay Siliconix
Datasheet: SI1065X-T1-E3  Specifications
Category: SemiconductorsTransistorsFETs, MOSFETs - Single
Description: MOSFET P-CH 12V 1.18A SOT563F
Lifecycle: Obsolete
EDA/CAD Models: SI1065X-T1-E3 PCB Footprint and Symbol
Estimated Delivery: Apr 3 - Apr 8 (Choose Expedited Shipping)
Warranty: Up to 1 year [Limited-Warranty]*

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SI1065X-T1-E3 Specifications

Part Number SI1065X-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 156mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 6V
FET Feature -
Power Dissipation (Max) 236mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-6
Package / Case SOT-563, SOT-666

SI1065X-T1-E3 Datasheet

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