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| Part Number: | SI1065X-T1-E3 |
| Manufacturer: | Vishay Siliconix |
| Datasheet: |  SI1065X-T1-E3 Specifications |
| Category: | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description: | MOSFET P-CH 12V 1.18A SOT563F |
| Lifecycle: | Obsolete |
| EDA/CAD Models: | SI1065X-T1-E3 PCB Footprint and Symbol |
| Estimated Delivery: | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Warranty: | Up to 1 year [Limited-Warranty]* |
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| 2500 | $ 0.0000 | $ 0.0000 |
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SI1065X-T1-E3 Specifications
| Part Number | SI1065X-T1-E3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 12V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.18A, 4.5V | |
| Vgs(th) (Max) @ Id | 950mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 6V | |
| FET Feature | - | |
| Power Dissipation (Max) | 236mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SC-89-6 | |
| Package / Case | SOT-563, SOT-666 |
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