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616 In Stock
Part Number: SI3410DV-T1-E3
Manufacturer: Vishay Siliconix
Datasheet: SI3410DV-T1-E3  Specifications
Category: SemiconductorsTransistorsFETs, MOSFETs - Single
Description: MOSFET N-CH 30V 8A 6-TSOP
Lifecycle: Obsolete
EDA/CAD Models: SI3410DV-T1-E3 PCB Footprint and Symbol
Estimated Delivery: Oct 1 - Oct 6 (Choose Expedited Shipping)
Warranty: Up to 1 year [Limited-Warranty]*

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SI3410DV-T1-E3 Specifications

Part Number SI3410DV-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6

SI3410DV-T1-E3 Datasheet

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