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| Part Number: | SI5504DC-T1-GE3 |
| Manufacturer: | Vishay Siliconix |
| Datasheet: |  SI5504DC-T1-GE3 Specifications |
| Category: | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description: | MOSFET N/P-CH 30V 2.9A 1206-8 |
| Lifecycle: | Obsolete |
| EDA/CAD Models: | SI5504DC-T1-GE3 PCB Footprint and Symbol |
| Estimated Delivery: | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Warranty: | Up to 1 year [Limited-Warranty]* |
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| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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SI5504DC-T1-GE3 Specifications
| Part Number | SI5504DC-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A | |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Power - Max | 1.1W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead | |
| Supplier Device Package | 1206-8 ChipFET™ |
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